GaN nucleation on patterned sapphire substrate with different shapes for improved GaN overgrowth
GaN was grown on cone- and dome-patterned sapphire (CPSS and DPSS) at different nucleation times of 40, 80 and 160 s. The GaN was also grown on flat sapphire substrate (FSS) for comparison. The results showed that the GaN growth improved by increasing the nucleation time, except for the case of FSS....
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| Main Authors: | , , , , |
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| Format: | Article |
| Published: |
Elsevier Ltd
2022
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| Subjects: | |
| Online Access: | http://eprints.utm.my/104699/ http://dx.doi.org/10.1016/j.vacuum.2021.110848 |
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| Institution: | Universiti Teknologi Malaysia |