GaN nucleation on patterned sapphire substrate with different shapes for improved GaN overgrowth

• Main Authors: Md. Taib, M. Ikram, S. N. Waheeda, S. N. Waheeda, Jasman, Faezah, M. Yusop, Mohd. Zamri, Zainal, Norzaini
• Format: Article
• Published: Elsevier Ltd 2022
• Subjects: TJ Mechanical engineering and machinery
• Online Access: http://eprints.utm.my/104699/; http://dx.doi.org/10.1016/j.vacuum.2021.110848
• Institution: Universiti Teknologi Malaysia

GaN was grown on cone- and dome-patterned sapphire (CPSS and DPSS) at different nucleation times of 40, 80 and 160 s. The GaN was also grown on flat sapphire substrate (FSS) for comparison. The results showed that the GaN growth improved by increasing the nucleation time, except for the case of FSS....