Design and analysis of electrical characteristics of 14nm SOI-based trigate gaussian channel junctionless FinFET
Planar MOSFETs are reaching their physical limits. To overcome the limitations and improve channel gate control, FinFET technology, which uses many gate devices, is a superior choice while lowering the size of planar MOSFETs even further. In this paper, 14nm Silicon-On-Insulator-based Trigate Gaussi...
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Main Authors: | , , , , , |
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Format: | Conference or Workshop Item |
Language: | English |
Published: |
2023
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Subjects: | |
Online Access: | http://eprints.utm.my/107888/1/NurulEzailaAlias2023_DesignandAnalysisofElectricalCharacteristics.pdf http://eprints.utm.my/107888/ http://dx.doi.org/10.1088/1742-6596/2622/1/012020 |
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Institution: | Universiti Teknologi Malaysia |
Language: | English |