Design and analysis of electrical characteristics of 14nm SOI-based trigate gaussian channel junctionless FinFET

Planar MOSFETs are reaching their physical limits. To overcome the limitations and improve channel gate control, FinFET technology, which uses many gate devices, is a superior choice while lowering the size of planar MOSFETs even further. In this paper, 14nm Silicon-On-Insulator-based Trigate Gaussi...

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Main Authors: Ramakrishnan, Mathangi, Alias, Nurul Ezaila, Hamzah, Afiq, Tan, Michael Loong Peng, Yusof, Yusmeeraz, Natarajamoorthy, Mathan
Format: Conference or Workshop Item
Language:English
Published: 2023
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Online Access:http://eprints.utm.my/107888/1/NurulEzailaAlias2023_DesignandAnalysisofElectricalCharacteristics.pdf
http://eprints.utm.my/107888/
http://dx.doi.org/10.1088/1742-6596/2622/1/012020
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Institution: Universiti Teknologi Malaysia
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spelling my.utm.1078882024-10-08T06:53:41Z http://eprints.utm.my/107888/ Design and analysis of electrical characteristics of 14nm SOI-based trigate gaussian channel junctionless FinFET Ramakrishnan, Mathangi Alias, Nurul Ezaila Hamzah, Afiq Tan, Michael Loong Peng Yusof, Yusmeeraz Natarajamoorthy, Mathan TK Electrical engineering. Electronics Nuclear engineering Planar MOSFETs are reaching their physical limits. To overcome the limitations and improve channel gate control, FinFET technology, which uses many gate devices, is a superior choice while lowering the size of planar MOSFETs even further. In this paper, 14nm Silicon-On-Insulator-based Trigate Gaussian Channel Junctionless FinFET is presented. The gate length of 14nm is considered along with an Equivalent Oxide Thickness of 1nm, 5nm as fin width, and the work function of the gate metal is 4.75eV. The device architecture has a non-uniform doping profile (Gaussian distribution) across the fin’s thickness. It is devised to address the effects of Random Dopant Fluctuations such as channel mobility degradation in Junctionless FinFET based devices. The impact of fin height (Fh), gate dielectric and spacer dielectric on the Drain Induced Barrier Lowering, Subthreshold Swing, drain current of GC-JLFinFET is analyzed. The results show that the Ion=101.5µA/µm and Ion/Ioff is 3.2x107 are obtained for the proposed device structure compared to the existing structure, which has Ion/Ioff of 1.1x107. Furthermore, the proposed design shows better efficiency in short channel characteristics, namely DIBL=25.3 mV/V, Subthreshold Swing=63.88 mV/dec and Transconductance =3.621x105 S/µm. Thus the Gaussian Channel-based FinFET architecture can provide optimum results for Junctionless-based FinFET devices. 2023 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/107888/1/NurulEzailaAlias2023_DesignandAnalysisofElectricalCharacteristics.pdf Ramakrishnan, Mathangi and Alias, Nurul Ezaila and Hamzah, Afiq and Tan, Michael Loong Peng and Yusof, Yusmeeraz and Natarajamoorthy, Mathan (2023) Design and analysis of electrical characteristics of 14nm SOI-based trigate gaussian channel junctionless FinFET. In: 1st International Conference on Electronic and Computer Engineering, ECE 2023, 4 July 2023 - 5 July 2023, Virtual, UTM Johor Bahru, Johor, Malaysia. http://dx.doi.org/10.1088/1742-6596/2622/1/012020
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Ramakrishnan, Mathangi
Alias, Nurul Ezaila
Hamzah, Afiq
Tan, Michael Loong Peng
Yusof, Yusmeeraz
Natarajamoorthy, Mathan
Design and analysis of electrical characteristics of 14nm SOI-based trigate gaussian channel junctionless FinFET
description Planar MOSFETs are reaching their physical limits. To overcome the limitations and improve channel gate control, FinFET technology, which uses many gate devices, is a superior choice while lowering the size of planar MOSFETs even further. In this paper, 14nm Silicon-On-Insulator-based Trigate Gaussian Channel Junctionless FinFET is presented. The gate length of 14nm is considered along with an Equivalent Oxide Thickness of 1nm, 5nm as fin width, and the work function of the gate metal is 4.75eV. The device architecture has a non-uniform doping profile (Gaussian distribution) across the fin’s thickness. It is devised to address the effects of Random Dopant Fluctuations such as channel mobility degradation in Junctionless FinFET based devices. The impact of fin height (Fh), gate dielectric and spacer dielectric on the Drain Induced Barrier Lowering, Subthreshold Swing, drain current of GC-JLFinFET is analyzed. The results show that the Ion=101.5µA/µm and Ion/Ioff is 3.2x107 are obtained for the proposed device structure compared to the existing structure, which has Ion/Ioff of 1.1x107. Furthermore, the proposed design shows better efficiency in short channel characteristics, namely DIBL=25.3 mV/V, Subthreshold Swing=63.88 mV/dec and Transconductance =3.621x105 S/µm. Thus the Gaussian Channel-based FinFET architecture can provide optimum results for Junctionless-based FinFET devices.
format Conference or Workshop Item
author Ramakrishnan, Mathangi
Alias, Nurul Ezaila
Hamzah, Afiq
Tan, Michael Loong Peng
Yusof, Yusmeeraz
Natarajamoorthy, Mathan
author_facet Ramakrishnan, Mathangi
Alias, Nurul Ezaila
Hamzah, Afiq
Tan, Michael Loong Peng
Yusof, Yusmeeraz
Natarajamoorthy, Mathan
author_sort Ramakrishnan, Mathangi
title Design and analysis of electrical characteristics of 14nm SOI-based trigate gaussian channel junctionless FinFET
title_short Design and analysis of electrical characteristics of 14nm SOI-based trigate gaussian channel junctionless FinFET
title_full Design and analysis of electrical characteristics of 14nm SOI-based trigate gaussian channel junctionless FinFET
title_fullStr Design and analysis of electrical characteristics of 14nm SOI-based trigate gaussian channel junctionless FinFET
title_full_unstemmed Design and analysis of electrical characteristics of 14nm SOI-based trigate gaussian channel junctionless FinFET
title_sort design and analysis of electrical characteristics of 14nm soi-based trigate gaussian channel junctionless finfet
publishDate 2023
url http://eprints.utm.my/107888/1/NurulEzailaAlias2023_DesignandAnalysisofElectricalCharacteristics.pdf
http://eprints.utm.my/107888/
http://dx.doi.org/10.1088/1742-6596/2622/1/012020
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