Physics-based modelling of ballistic transport in nanoscale transistor

• Main Authors: Saad, Ismail, Lee, Razak M. A., Ismail, Razali, Arora, Vijay K.
• Format: Book Section
• Published: Institute of Electrical and Electronics Engineers 2009
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/13052/; http://dx.doi.org/10.1109/AMS.2009.46
• Institution: Universiti Teknologi Malaysia

The ballistic transport of the carriers is predicted when the channel length of the transistor is less than the scattering-limited mean-free path. In this paper, the saturation velocity is found to be ballistic regardless of the device dimensions. This saturation velocity is limited by the intrinsic...