Heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane at low temperature

• Main Authors: Hashim, Abdul Manaf, Kanji, Yasui
• Format: Article
• Language: English; English
• Published: Penerbit UTM Press 2009
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/13363/2/AbdulManafHashim2009_HeteroepitaxialGrowth.pdf; http://eprints.utm.my/id/eprint/13363/1/163; http://eprints.utm.my/id/eprint/13363/
• Institution: Universiti Teknologi Malaysia

The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good...