Analytical study of carriers in silicon nanowires
The limitations on carrier (holes and electrons) drift due to high-field streamlining also randomly velocity vector in equilibrium is reported. Asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field is employed. The ultimate drift v...
محفوظ في:
| المؤلفون الرئيسيون: | , , , , |
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| التنسيق: | مقال |
| منشور في: |
2009
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://eprints.utm.my/id/eprint/13682/ https://www.researchgate.net/publication/260835448_Analytical_Study_of_Carriers_in_Silicon_NanoWires |
| الوسوم: |
إضافة وسم
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| المؤسسة: | Universiti Teknologi Malaysia |
| الملخص: | The limitations on carrier (holes and electrons) drift due to high-field streamlining also randomly velocity vector in equilibrium is reported. Asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field is employed. The ultimate drift velocity is found to be appropriate thermal velocity for a given dimensionality for non-degenerately doped nanostructure. However, the ultimate drift velocity is the Fermi velocity for degenerately doped nanostructures. Quantum and high-field effects controlling the transport of carrier in nanostructures are described. The results obtained are applied to the modeling of a nanowire transistor |
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