Extraction of SPICE model for double gate vertical MOSFET

• Main Authors: Suseno, Jatmiko E., Ahmad, Muhammad Taghi, Riyadi, Munawar A., Ismail, Razali
• Format: Book Section
• Published: IEEE 2009
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/14310/; http://dx.doi.org/10.1109/AMS.2009.129
• Institution: Universiti Teknologi Malaysia

Vertical MOSFETs device have one important disadvantage, which is higher overlap capacitances such as the separated gate-source and gate-drain parasitic capacitances (CGSO and CGDO), which is known to be most crucial to the high-frequency/speed performance but very hard to extract. In this paper pre...