Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor

• Main Authors: Chek, Desmond C. Y., Tan, Michael Loong Peng, Ahmadi, Mohammad Taghi, Ismail, Razali, Arora, Vijay K.
• Format: Article
• Language: English
• Published: Elsevier BV 2010
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/22857/1/DesmondCYChek2010_AnalyticalModelingofHighPerformanceSingleWalled.pdf; http://eprints.utm.my/id/eprint/22857/; https://doi.org/10.1016/j.mejo.2010.05.008
• Institution: Universiti Teknologi Malaysia

We present a novel analytical modeling of a zigzag single-walled semiconducting carbon nanotube field effect transistor (CNFET) by incorporating quasi-one-dimensional (Q1D) top-of-a-potential barrier approach. By implementing multimode carrier transport, we explore and compare the performance of a low- (360 cm2/Vs) and high-mobility (7200 cm2/Vs) CNFET model with experimental data from nanotube and 45 nm MOSFET, respectively, as well as existing compact models. Mobility and carrier concentration models are also developed to obtain a good matching with physical data. For a high mobility CNFET, we found that a maximum of 120 µA is obtained. In addition to this, a CNT-based inverter is also developed by constructing n-type and p-type CNFET in ORCAD’s analog behavioral model (ABM). A gain of as high as 5.2 is forecasted for an inverter of 80 nm CNFET.