Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition

• Main Author: Hashim, Abdul Manaf
• Format: Article
• Published: Asian Network for Scientific Information 2008
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/25919/; http://scialert.net/qredirect.php?doi=jas.2008.3473.3478&linkid=pdf
• Institution: Universiti Teknologi Malaysia

Surface carbonization on Si (100) and Si (111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependence of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rate...