The future of non-planar nanoelectronics MOSFET devices: a review
This study was focused on the evaluation of present development of nanoelectronic devices and the projection of future devices, ultimately for non-planar geometry. The recent scaling of IC technology was limiting the employment of conventional, planar structure, thus implies in the wake of the resea...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Asian Network for Scientific Information
2010
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/26562/1/RazaliIsmail_TheFutureofNon-planarNanoelectronics.pdf http://eprints.utm.my/id/eprint/26562/ http://scialert.net/abstract/?doi=jas.2010.2136.2146 |
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| Institution: | Universiti Teknologi Malaysia |
| Language: | English |
| Summary: | This study was focused on the evaluation of present development of nanoelectronic devices and the projection of future devices, ultimately for non-planar geometry. The recent scaling of IC technology was limiting the employment of conventional, planar structure, thus implies in the wake of the research in non-classical architecture. The present status of extended planar silicon devices, including the insertion of high-k dielectric, metal gate and SOI MOSFET in the recent manufacturing process is elaborated. The alternative path in the enhancement of IC device performance, merely in the sub-50nm dimension is shown, with the role of double gate MOSFET and non-planar structure devices, including vertical FETs, is expected to take greater share, as well as several emerging nanostructures. The possibility to implement the non-planar devices generation heavily depends on the maturity of each technology and the ability to clear the obstacles in processing. |
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