The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth
Cylindrical InxGa1-xAs nanowires (NWs) perpendicular to the substrate have been successfully grown using MOCVD. Morphology of InxGa1-xAs NWs has been observed using Field Emission-Scanning Electron Microscopy (FE-SEM) and Transmission Electron Microscopy (TEM). Both FE-SEM and TEM results show that...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
World Scientific
2011
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/29478/ http://dx.doi.org/10.1142/S1793292011002457 |
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| Institution: | Universiti Teknologi Malaysia |
| Summary: | Cylindrical InxGa1-xAs nanowires (NWs) perpendicular to the substrate have been successfully grown using MOCVD. Morphology of InxGa1-xAs NWs has been observed using Field Emission-Scanning Electron Microscopy (FE-SEM) and Transmission Electron Microscopy (TEM). Both FE-SEM and TEM results show that the NWs grown at low growth temperature and V/III ratio were via direct impinging mechanism. Energy Dispersive X-ray spectroscopy (EDX) results confirm that the cylindrical NWs grown via direct impinging mechanism and tends to have uniform chemical composition. |
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