The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth

The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth

Cylindrical InxGa1-xAs nanowires (NWs) perpendicular to the substrate have been successfully grown using MOCVD. Morphology of InxGa1-xAs NWs has been observed using Field Emission-Scanning Electron Microscopy (FE-SEM) and Transmission Electron Microscopy (TEM). Both FE-SEM and TEM results show that...

Full description

Saved in:
Bibliographic Details
Main Authors: Othaman, Zulkafli, Sakrani, Samsudi, Wibowo , Edy, Sumpono, Imam
Format: Article
Published: World Scientific 2011
Subjects:
Q Science (General)
Online Access:http://eprints.utm.my/id/eprint/29478/
http://dx.doi.org/10.1142/S1793292011002457
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Universiti Teknologi Malaysia
id my.utm.29478
record_format eprints
spelling my.utm.294782017-02-13T07:23:26Z http://eprints.utm.my/id/eprint/29478/ The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth Othaman, Zulkafli Sakrani, Samsudi Wibowo , Edy Sumpono, Imam Q Science (General) Cylindrical InxGa1-xAs nanowires (NWs) perpendicular to the substrate have been successfully grown using MOCVD. Morphology of InxGa1-xAs NWs has been observed using Field Emission-Scanning Electron Microscopy (FE-SEM) and Transmission Electron Microscopy (TEM). Both FE-SEM and TEM results show that the NWs grown at low growth temperature and V/III ratio were via direct impinging mechanism. Energy Dispersive X-ray spectroscopy (EDX) results confirm that the cylindrical NWs grown via direct impinging mechanism and tends to have uniform chemical composition. World Scientific 2011 Article PeerReviewed Othaman, Zulkafli and Sakrani, Samsudi and Wibowo , Edy and Sumpono, Imam (2011) The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth. NANO, 6 (2). pp. 159-165. ISSN 1793-2920 http://dx.doi.org/10.1142/S1793292011002457 10.1142/S1793292011002457
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic Q Science (General)
spellingShingle Q Science (General)
Othaman, Zulkafli
Sakrani, Samsudi
Wibowo , Edy
Sumpono, Imam
The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth
description Cylindrical InxGa1-xAs nanowires (NWs) perpendicular to the substrate have been successfully grown using MOCVD. Morphology of InxGa1-xAs NWs has been observed using Field Emission-Scanning Electron Microscopy (FE-SEM) and Transmission Electron Microscopy (TEM). Both FE-SEM and TEM results show that the NWs grown at low growth temperature and V/III ratio were via direct impinging mechanism. Energy Dispersive X-ray spectroscopy (EDX) results confirm that the cylindrical NWs grown via direct impinging mechanism and tends to have uniform chemical composition.
format Article
author Othaman, Zulkafli
Sakrani, Samsudi
Wibowo , Edy
Sumpono, Imam
author_facet Othaman, Zulkafli
Sakrani, Samsudi
Wibowo , Edy
Sumpono, Imam
author_sort Othaman, Zulkafli
title The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth
title_short The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth
title_full The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth
title_fullStr The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth
title_full_unstemmed The advantage of low growth temperature and V/III ratio for In(x)Ga(1-x)As nanowires growth
title_sort advantage of low growth temperature and v/iii ratio for in(x)ga(1-x)as nanowires growth
publisher World Scientific
publishDate 2011
url http://eprints.utm.my/id/eprint/29478/
http://dx.doi.org/10.1142/S1793292011002457
_version_ 1643648307408404480

Similar Items