Effects of S/D doping concentrations on vertical strained-sige impact ionization MOSFET incorporating dielectric pocket (VESIMOS-DP)

Effects of S/D doping concentrations on vertical strained-sige impact ionization MOSFET incorporating dielectric pocket (VESIMOS-DP)

The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET with Dielectric Pocket (VESIMOS-DP) has been successfully developed and analyzed in this paper. The effect of Source and Drain (S/D) doping concentration to the VESIMOS-DP on the performance of the device in terms of subthreshol...

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Bibliographic Details
Main Authors: Ismail, Razali, Saad, Ismail, Hamzah, Zuhir, Seng, Bun, Anuar, Khairul, Ghosh, Bablu, Bolong, Nurmin
Format: Conference or Workshop Item
Published: 2013
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/37616/
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Institution: Universiti Teknologi Malaysia

Internet

http://eprints.utm.my/id/eprint/37616/

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