Enhanced performance analysis of vertical strained-sige impact ionization MOSFET (VESIMOS)

• Main Authors: Saad, Ismail, Pogaku, Divya, A. R., Abu Bakar, H., Mohd. Zuhir, Bolon, N., A. M., Khairul, Ghosh, Bablu, Ismai, Razali, Hashim, U.
• Format: Conference or Workshop Item
• Published: 2012
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/39818/; http://dx.doi.org/10.1109/SMElec.2012.6417118
• Institution: Universiti Teknologi Malaysia

The Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET (VESIMOS) has been successfully developed and analyzed in this paper. VESIMOS device integrates vertical structure concept of Impact Ionization MOSFET (IMOS) and strained technology. The transfer characteristics of VESIMOS revea...