Orientation stabilized rapid melting growth of thin (100) ge-on-insulator structures and their implementation in homoepitaxial growth

Integration of Ge on the Si platforms is essential for the development of next generation large-scale integrated circuits. The Ge-on-insulator (GOI) structure is suited for the realization of high-mobility transistors channels and as epitaxial templates for optoelectronic and spintronic materials. I...

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Main Authors: Anisuzzaman, Mohammad, Muta, Shunpei, Hashim, Abdul Manaf, Sadoh, Taizoh
Format: Article
Published: 2013
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Online Access:http://eprints.utm.my/id/eprint/40959/
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Institution: Universiti Teknologi Malaysia
id my.utm.40959
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spelling my.utm.409592017-02-15T06:42:10Z http://eprints.utm.my/id/eprint/40959/ Orientation stabilized rapid melting growth of thin (100) ge-on-insulator structures and their implementation in homoepitaxial growth Anisuzzaman, Mohammad Muta, Shunpei Hashim, Abdul Manaf Sadoh, Taizoh TK Electrical engineering. Electronics Nuclear engineering Integration of Ge on the Si platforms is essential for the development of next generation large-scale integrated circuits. The Ge-on-insulator (GOI) structure is suited for the realization of high-mobility transistors channels and as epitaxial templates for optoelectronic and spintronic materials. In this work, the fabrication of thin (~50 nm) (100) GOI by the rapid melting growth process has been investigated. Growth with unstable crystal orientation has been observed in wide (=1 µm) GOI strips. However, orientation stabilized growth was achieved in narrow strips (~0.5 µm). Further stabilization of growth orientation was observed in mesh patterned growth with GOI width of 1 µm. Epitaxial growth of Ge was performed on the above structures and the formation of uniform epitaxial layer was demonstrated. 2013 Article PeerReviewed Anisuzzaman, Mohammad and Muta, Shunpei and Hashim, Abdul Manaf and Sadoh, Taizoh (2013) Orientation stabilized rapid melting growth of thin (100) ge-on-insulator structures and their implementation in homoepitaxial growth. Research Reports on Information Science and Electrical Engineering of Kyushu University, 18 (2). pp. 63-67. ISSN 1342-3819
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Anisuzzaman, Mohammad
Muta, Shunpei
Hashim, Abdul Manaf
Sadoh, Taizoh
Orientation stabilized rapid melting growth of thin (100) ge-on-insulator structures and their implementation in homoepitaxial growth
description Integration of Ge on the Si platforms is essential for the development of next generation large-scale integrated circuits. The Ge-on-insulator (GOI) structure is suited for the realization of high-mobility transistors channels and as epitaxial templates for optoelectronic and spintronic materials. In this work, the fabrication of thin (~50 nm) (100) GOI by the rapid melting growth process has been investigated. Growth with unstable crystal orientation has been observed in wide (=1 µm) GOI strips. However, orientation stabilized growth was achieved in narrow strips (~0.5 µm). Further stabilization of growth orientation was observed in mesh patterned growth with GOI width of 1 µm. Epitaxial growth of Ge was performed on the above structures and the formation of uniform epitaxial layer was demonstrated.
format Article
author Anisuzzaman, Mohammad
Muta, Shunpei
Hashim, Abdul Manaf
Sadoh, Taizoh
author_facet Anisuzzaman, Mohammad
Muta, Shunpei
Hashim, Abdul Manaf
Sadoh, Taizoh
author_sort Anisuzzaman, Mohammad
title Orientation stabilized rapid melting growth of thin (100) ge-on-insulator structures and their implementation in homoepitaxial growth
title_short Orientation stabilized rapid melting growth of thin (100) ge-on-insulator structures and their implementation in homoepitaxial growth
title_full Orientation stabilized rapid melting growth of thin (100) ge-on-insulator structures and their implementation in homoepitaxial growth
title_fullStr Orientation stabilized rapid melting growth of thin (100) ge-on-insulator structures and their implementation in homoepitaxial growth
title_full_unstemmed Orientation stabilized rapid melting growth of thin (100) ge-on-insulator structures and their implementation in homoepitaxial growth
title_sort orientation stabilized rapid melting growth of thin (100) ge-on-insulator structures and their implementation in homoepitaxial growth
publishDate 2013
url http://eprints.utm.my/id/eprint/40959/
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