DFT investigations of structural and electronic properties of gallium arsenide (GAAS)

First principles calculations for structural and electronic properties of GaAs have been reported using a full potential linearized augmented plane wave (FP-LAPW) scheme of calculations developed within density functional theory (DFT). We use in this study local density approximation (LDA), Perdew-B...

Full description

Saved in:
Bibliographic Details
Main Authors: Anua, N. Najwa, Ahmed, Rashid, Saeed, Mohammad Alam, Shaari, Amiruddin, Ul Haq, Bakhtiar
Format: Article
Published: 2012
Subjects:
Online Access:http://eprints.utm.my/id/eprint/46812/
http://dx.doi.org/10.1063/1.4757439
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Universiti Teknologi Malaysia

Similar Items