DFT investigations of structural and electronic properties of gallium arsenide (GAAS)
First principles calculations for structural and electronic properties of GaAs have been reported using a full potential linearized augmented plane wave (FP-LAPW) scheme of calculations developed within density functional theory (DFT). We use in this study local density approximation (LDA), Perdew-B...
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Main Authors: | , , , , |
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格式: | Article |
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2012
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在線閱讀: | http://eprints.utm.my/id/eprint/46812/ http://dx.doi.org/10.1063/1.4757439 |
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機構: | Universiti Teknologi Malaysia |