Behavior of defects in a-plane GaN films grown by low-angle-incidence microchannel epitaxy (LAIMCE)

• Main Authors: Kuwano, Noriyuki, Ryu, Yuki, Mitsuhara, Masatoshi, Chia, Hung Lin, Uchiyama, Shota, Maruyama, Takahiro, Suzuki, Yohei, Naritsuka, Shigeya
• Format: Article
• Published: Elsevier B.V. 2014
• Subjects: T Technology
• Online Access: http://eprints.utm.my/id/eprint/51987/; http://dx.doi.org/10.1016/j.jcrysgro.2013.11.032
• Institution: Universiti Teknologi Malaysia

The microstructure in a-plane GaN thin films was characterized by transmission electron microscopy. The GaN thin films were grown by metal-organic molecular beam epitaxy (MOMBE) on a GaN/r-plane sapphire template using the low-angle-incidence microchannel epitaxy (LAIMCE) technique, following fabric...