Characterization of vertical strained SiGe impact ionization MOSFET for ultra-sensitive biosensor application

• Main Authors: Saad, Ismail, Hamzah, Mohd. Zuhir, Seng, Chanbun, Khairul, A. M., Ghosh, Bablu, Bolong, Nurmin, Ismail, Razali
• Format: Article
• Published: Institute of Electrical and Electronics Engineers Inc. 2014
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/52106/; http://dx.doi.org/10.1109/SMELEC.2014.6920819
• Institution: Universiti Teknologi Malaysia

This paper venture into prospective ideas of finding viable solution of nanoelectronics device design by an assessment of incorporating vertical impact-ionization MOSFET (IMOS) with strained SiGe technology into a formation of an emerging device structure with elevated performance and reliable outco...