Seed/catalyst-free growth of gallium-based compound materials on graphene on insulator by electrochemical deposition at room temperature

Seed/catalyst-free growth of gallium-based compound materials on graphene on insulator by electrochemical deposition at room temperature

We report the growth of gallium-based compounds, i.e., gallium oxynitride (GaON) and gallium oxide (Ga2O3) on multilayer graphene (MLG) on insulator using a mixture of ammonium nitrate (NH4NO3) and gallium nitrate (Ga(NO3)3) by electrochemical deposition (ECD) method at room temperature (RT) for the...

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Bibliographic Details
Main Authors: Rashiddy Wong, Freddawati, Ahmed Ali, Amgad, Yasui, Kanji, Hashim, Abdul Manaf
Format: Article
Published: Springer New York 2015
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/55389/
http://dx.doi.org/10.1186/s11671-015-0943-y
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Institution: Universiti Teknologi Malaysia

Internet

http://eprints.utm.my/id/eprint/55389/
http://dx.doi.org/10.1186/s11671-015-0943-y

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