Analytical study of electronic structure in archimedean type-spiral zig-zag graphene nanoscroll

The semiconducting electronic properties of graphene nanoscroll (GNS) are very much related to its geometric structure. The aim of this study is to construct a GNS energy dispersion model within low-energy transport of 1 eV in identifying its electronic properties and carrier statistics. Non-parabol...

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Main Authors: Hamzah, Afiq, Ahmadi, Mohammad Taghi, Ismail, Razali
Format: Article
Published: Bentham Science Publishers B.V. 2015
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Online Access:http://eprints.utm.my/id/eprint/57822/
http://dx.doi.org/10.2174/1573413710999140918201702
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Institution: Universiti Teknologi Malaysia
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spelling my.utm.578222022-04-05T06:42:57Z http://eprints.utm.my/id/eprint/57822/ Analytical study of electronic structure in archimedean type-spiral zig-zag graphene nanoscroll Hamzah, Afiq Ahmadi, Mohammad Taghi Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering The semiconducting electronic properties of graphene nanoscroll (GNS) are very much related to its geometric structure. The aim of this study is to construct a GNS energy dispersion model within low-energy transport of 1 eV in identifying its electronic properties and carrier statistics. Non-parabolic energy dispersion is used to incorporate the Archimedean type-spiral model, and the band gap is assessed based on chirality and geometry effects. The energy band within low-energy transport indicates that GNS can achieve a quantum conductance limit of ~6.45 kO ?for ballistic transport. On the other hand, the numbers for three minimum sub-bands are attained based on non-parabolic energy dispersion, and the semi-metallic zig-zag GNS is found at chirality (3j + 1, 0). This work consistently predicts the semiconducting properties of the tight-binding model from previous work. The GNS overlapping region strongly affects its electronic properties. Constantly increasing the length of the overlapping region decreases the band gap exponentially, whilst semimetallic GNS forms when the overlap reaches a certain limit. The carrier density with temperature dependence is subsequently assessed at the intrinsic level, and found that the number of carriers in GNS shows a higher rate of increment (exponentially) compared to carbon nanotubes (CNT), in accordance to their diameter. The results are very useful in giving an intuitive understanding on GNS carrier statistics as subject to geometry changes. Bentham Science Publishers B.V. 2015 Article PeerReviewed Hamzah, Afiq and Ahmadi, Mohammad Taghi and Ismail, Razali (2015) Analytical study of electronic structure in archimedean type-spiral zig-zag graphene nanoscroll. Current Nanoscience, 11 (1). pp. 87-94. ISSN 1573-4137 http://dx.doi.org/10.2174/1573413710999140918201702
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Hamzah, Afiq
Ahmadi, Mohammad Taghi
Ismail, Razali
Analytical study of electronic structure in archimedean type-spiral zig-zag graphene nanoscroll
description The semiconducting electronic properties of graphene nanoscroll (GNS) are very much related to its geometric structure. The aim of this study is to construct a GNS energy dispersion model within low-energy transport of 1 eV in identifying its electronic properties and carrier statistics. Non-parabolic energy dispersion is used to incorporate the Archimedean type-spiral model, and the band gap is assessed based on chirality and geometry effects. The energy band within low-energy transport indicates that GNS can achieve a quantum conductance limit of ~6.45 kO ?for ballistic transport. On the other hand, the numbers for three minimum sub-bands are attained based on non-parabolic energy dispersion, and the semi-metallic zig-zag GNS is found at chirality (3j + 1, 0). This work consistently predicts the semiconducting properties of the tight-binding model from previous work. The GNS overlapping region strongly affects its electronic properties. Constantly increasing the length of the overlapping region decreases the band gap exponentially, whilst semimetallic GNS forms when the overlap reaches a certain limit. The carrier density with temperature dependence is subsequently assessed at the intrinsic level, and found that the number of carriers in GNS shows a higher rate of increment (exponentially) compared to carbon nanotubes (CNT), in accordance to their diameter. The results are very useful in giving an intuitive understanding on GNS carrier statistics as subject to geometry changes.
format Article
author Hamzah, Afiq
Ahmadi, Mohammad Taghi
Ismail, Razali
author_facet Hamzah, Afiq
Ahmadi, Mohammad Taghi
Ismail, Razali
author_sort Hamzah, Afiq
title Analytical study of electronic structure in archimedean type-spiral zig-zag graphene nanoscroll
title_short Analytical study of electronic structure in archimedean type-spiral zig-zag graphene nanoscroll
title_full Analytical study of electronic structure in archimedean type-spiral zig-zag graphene nanoscroll
title_fullStr Analytical study of electronic structure in archimedean type-spiral zig-zag graphene nanoscroll
title_full_unstemmed Analytical study of electronic structure in archimedean type-spiral zig-zag graphene nanoscroll
title_sort analytical study of electronic structure in archimedean type-spiral zig-zag graphene nanoscroll
publisher Bentham Science Publishers B.V.
publishDate 2015
url http://eprints.utm.my/id/eprint/57822/
http://dx.doi.org/10.2174/1573413710999140918201702
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