The effect of V/III ratio on the crystal structure of gallium arsenide nanowires

• Main Authors: Muhammad, Rosnita, Wahab, Y., Ibrahim, Zuhairi, Othaman, Zulkafli, Sakrani, S., Ahamad, R.
• Format: Article
• Published: Trans Tech Publication 2014
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/62898/; http://dx.doi.org/10.4028/www.scientific.net/AMR.895.539
• Institution: Universiti Teknologi Malaysia

Gallium arsenide (GaAs) nanowires were grown vertically on GaAs (111)B substrate by gold particle-assisted using metal-organic chemical vapour deposition. Transmission electron microscopy and X-Ray diffraction analysis were carried out to investigate the effects of V/III ratio and nanowire diameter on structural properties and crystallinity changes. Results show that GaAs nanowires grow preferably in the wurtzite crystal structure than zinc blende structure with increasing V/III ratio. Additionally, XRD studies have revealed that wurtzite nanowires show prominent peaks especially at (222) orientation. The optimum V/III ratio was found to be 166 with less defect structure, uniform diameter and peak prominence. The nanowires with high quality are needed in solar cells technology for energy trapping with maximum capacity.Keywords : Nanowire; crystal structure; Gallium arsenide; Vapor Liquid Solid.