The effect of V/III ratio on the crystal structure of gallium arsenide nanowires

• Main Authors: Muhammad, Rosnita, Wahab, Y., Ibrahim, Zuhairi, Othaman, Zulkafli, Sakrani, S., Ahamad, R.
• Format: Article
• Published: Trans Tech Publication 2014
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/62898/; http://dx.doi.org/10.4028/www.scientific.net/AMR.895.539
• Institution: Universiti Teknologi Malaysia

Gallium arsenide (GaAs) nanowires were grown vertically on GaAs (111)B substrate by gold particle-assisted using metal-organic chemical vapour deposition. Transmission electron microscopy and X-Ray diffraction analysis were carried out to investigate the effects of V/III ratio and nanowire diameter...