The effects of annealing temperatures on composition and strain in SixGe(1-x) obtained by melting growth of electrodeposited Ge on Si (100)

The effects of annealing temperatures on composition and strain in SixGe(1-x) obtained by melting growth of electrodeposited Ge on Si (100)

The effects of annealing temperatures on composition and strain in SixGe1-x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 degrees C for 1 s. All annealed samples sho...

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Bibliographic Details
Main Authors: Zainal Abidin, Mastura Shafinaz, Morshed, Tahsin, Chikita, Hironori, Kinoshita, Yuki, Muta, Shunpei, Anisuzzaman, Mohammad, Park, Jong-Hyeok, Matsumura, Ryo, Mahmood, Mohamad Rusop, Sadoh, Taizoh, Hashim, Abdul Manaf
Format: Article
Published: MDPI AG 2014
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/62904/
http://dx.doi.org/10.3390/ma7021409
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Institution: Universiti Teknologi Malaysia

Internet

http://eprints.utm.my/id/eprint/62904/
http://dx.doi.org/10.3390/ma7021409

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