The effects of annealing temperatures on composition and strain in SixGe(1-x) obtained by melting growth of electrodeposited Ge on Si (100)

• Main Authors: Zainal Abidin, Mastura Shafinaz, Morshed, Tahsin, Chikita, Hironori, Kinoshita, Yuki, Muta, Shunpei, Anisuzzaman, Mohammad, Park, Jong-Hyeok, Matsumura, Ryo, Mahmood, Mohamad Rusop, Sadoh, Taizoh, Hashim, Abdul Manaf
• Format: Article
• Published: MDPI AG 2014
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/62904/; http://dx.doi.org/10.3390/ma7021409
• Institution: Universiti Teknologi Malaysia

The effects of annealing temperatures on composition and strain in SixGe1-x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 degrees C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at similar to 400 cm(-1) confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing.