Bismuth (III) Telluride (Bi2Te3) embedded in PVA as a passive saturable absorber in a 2 micron region
We demonstrate a passive Q-switched at 2 um region by integrating Bismuth (III) Telluride (Bi2/Te3) embedded in Polyvinyl Alcohol (PVA). Bi2Te3 was embedded in PVA by solution casting approach to develop a Bi2/Te3-PVA film and integrated in the laser cavity with ring configuration to generate pulse...
Saved in:
| Main Authors: | , , , , |
|---|---|
| 格式: | Article |
| 出版: |
Photonics Society of Poland
2016
|
| 主題: | |
| 在線閱讀: | http://eprints.utm.my/id/eprint/66882/ http://dx.doi.org/10.4302/plp.2016.4.04 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| 機構: | Universiti Teknologi Malaysia |
| 總結: | We demonstrate a passive Q-switched at 2 um region by integrating Bismuth (III) Telluride (Bi2/Te3) embedded in Polyvinyl Alcohol (PVA). Bi2Te3 was embedded in PVA by solution casting approach to develop a Bi2/Te3-PVA film and integrated in the laser cavity with ring configuration to generate pulse laser. The experimental works show that the proposed passive saturable absorber operates at input pump power ranges from 637 mW to 784 mW with central wavelength of 1957.6 nm. We observed the tunable repetition rate from 12.6 kHz to 26.1 kHz with the shortest pulse width of 2.22 us. The laser produces maximum instantaneous output peak power and pulse energy of 0.42 W and 0.94 uJ, respectively. |
|---|