Bismuth (III) Telluride (Bi2Te3) embedded in PVA as a passive saturable absorber in a 2 micron region

• Main Authors: Ahmad, Fauzan, Ibrahim, Mohd. Haniff, Sulaiman, Wadi Harun, Zuikafly, Siti Nur Fatin, Muhamad Apandi, Nur Hidayah
• Format: Article
• Published: Photonics Society of Poland 2016
• Subjects: T Technology; TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/66882/; http://dx.doi.org/10.4302/plp.2016.4.04
• Institution: Universiti Teknologi Malaysia

We demonstrate a passive Q-switched at 2 um region by integrating Bismuth (III) Telluride (Bi2/Te3) embedded in Polyvinyl Alcohol (PVA). Bi2Te3 was embedded in PVA by solution casting approach to develop a Bi2/Te3-PVA film and integrated in the laser cavity with ring configuration to generate pulse laser. The experimental works show that the proposed passive saturable absorber operates at input pump power ranges from 637 mW to 784 mW with central wavelength of 1957.6 nm. We observed the tunable repetition rate from 12.6 kHz to 26.1 kHz with the shortest pulse width of 2.22 us. The laser produces maximum instantaneous output peak power and pulse energy of 0.42 W and 0.94 uJ, respectively.