Analysis of Co-Tunneling Current in Fullerene Single-Electron Transistor
Single-electron transistors (SETs) are nano devices which can be used in low-power electronic systems. They operate based on coulomb blockade effect. This phenomenon controls single-electron tunneling and it switches the current in SET. On the other hand, co-tunneling process increases leakage curre...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
Springer New York LLC
2018
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/84129/ http://dx.doi.org/10.1007/s13538-018-0574-8 |
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| Institution: | Universiti Teknologi Malaysia |
| Summary: | Single-electron transistors (SETs) are nano devices which can be used in low-power electronic systems. They operate based on coulomb blockade effect. This phenomenon controls single-electron tunneling and it switches the current in SET. On the other hand, co-tunneling process increases leakage current, so it reduces main current and reliability of SET. Due to co-tunneling phenomenon, main characteristics of fullerene SET with multiple islands are modelled in this research. Its performance is compared with silicon SET and consequently, research result reports that fullerene SET has lower leakage current and higher reliability than silicon counterpart. Based on the presented model, lower co-tunneling current is achieved by selection of fullerene as SET island material which leads to smaller value of the leakage current. Moreover, island length and the number of islands can affect on co-tunneling and then they tune the current flow in SET. |
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