Single electron transistor scheme based on multiple quantum dot Islands: carbon nanotube and fullerene

• Main Authors: Khademhosseini, Vahideh, Dideban, Daryoosh, Ahmadi, Mohammad Taghi, Ismail, Razali, Heidari, Hadi
• Format: Article
• Language: English
• Published: Electrochemical Society Inc. 2018
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/84455/1/MohammadTaghiAhmadi2018_SingleElectronTransistorSchemeBasedonMultiple.pdf; http://eprints.utm.my/id/eprint/84455/; http://dx.doi.org/10.1149/2.0081810jss
• Institution: Universiti Teknologi Malaysia

Single electron transistor (SET) is a nano dimension device that is offered by technology to solve the problem of aggressive scaling in traditional transistors. Its operation speed depends on carrier mobility of its quantum dot. In this research, fullerene (C60) and carbon nanotube (CNT) are utilize...