Performance analysis of one dimensional BC2N for nanoelectronics applications

• Main Authors: Lim, Wei Hong, Hamzah, Afiq, Ahmadi, Mohammad Taghi, Ismail, Razali
• Format: Article
• Published: Elsevier B.V. 2018
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/85114/; http://dx.doi.org/10.1016/j.physe.2018.04.005
• Institution: Universiti Teknologi Malaysia

The BC2N which is one of the graphene-boron nitride nanocomposites is found to have tunable electronic properties besides having an analogous hexagonal structure with the graphene and boron nitride. To assure the capability of the BC2N nanowire (BC2NNW) in the nanoelectronics and optoelectronics applications, the analytical modelling has been carried out using MATLAB followed by the performance analysis in which the nature of the carrier statistic and the intrinsic velocity are discussed. The results show that the carrier concentration of the BC2NNW is 7.143 × 107 m−1. Besides that, the intrinsic velocity of BC2NNW is dependent on the temperature in the non-degenerate regime while only dependent on the carrier concentration when entering the degenerate regime. Moreover, a comparable trend of the current-voltage (I-V) characteristics graph is obtained when compared with the published experimental result with an extracted subthreshold swing of 59.6mV/decade. These further assure the BC2N as one of the potential candidates in nanoelectronics and optoelectronics applications in the future.