Analytical modeling of current-voltage characteristics of phosphorene based field effect transistor

• Main Authors: Zangi, Shiva, Ahmadi, Mohammad Taghi, Ismail, Razali
• Format: Article
• Published: American Scientific Publishers 2018
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/85469/; http://dx.doi.org/10.1166/jno.2018.2377
• Institution: Universiti Teknologi Malaysia

Phosphorene, a new two-dimensional semiconductor, with its outstanding electro-optical and transport features has been studied extremely in recent years. However, the modeling of its interesting properties needs to be explored in more details. In this paper, an analytical model for conductance variations in the proposed phosphorene based field effect transistor is presented based on phosphorene energy dispersion relation and a tunable behaviour due to the alteration of gate voltage is reported. Moreover, the current–voltage characteristic of the phosphorene based nano device has been analyzed theoretically and an acceptable I ON/I OFF ratio about 105 is calculated for different bias values. In addition, data from the suggested current model is compared with the extracted experimental data which shows good agreement and confirms the validity of the suggested model in a desirable manner. Hence, it should be noted that the outcome of this paper can be extremely useful in the analysis of phosphorene based nano devices especially nano-sensors.