Impact of hydrogen adsorption on the performance of a single electron transistor utilizing fullerene quantum dots

• Main Authors: Khademhosseini, Vahideh, Dideban, Daryoosh, Ahmadi, Mohammad Taghi, Ismail, Razali, Heidari, Hadi
• Format: Article
• Published: Electrochemical Society Inc. 2018
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/86572/; http://dx.doi.org/10.1149/2.0281811jss
• Institution: Universiti Teknologi Malaysia

The single electron transistor (SET) is a nanoscale electronic device with fast operation speed. The selection of quantum dot as its Island can increase its speed. In this research, fullerene quantum dot is suggested as Island of SET and also hydrogen atoms are added to fullerene molecule. Comparison study shows that the number of hydrogen atoms can decrease coulomb blockade and zero current range. Moreover, increasing the number of fullerene quantum dots has an impact on coulomb diamond area, so reliability of SET can be improved. Therefore choosing suitable number of fullerene quantum dots and hydrogen atoms can SET current to a desired value.