Annealing temperature induced improved crystallinity of ysz thin film
Six YSZ thin films (YSZTFs) were prepared at varied annealing temperature (380 °C to 600 °C) by radio frequency magnetron sputtering method. Glancing angle x-ray diffraction (GAXRD) pattern revealed the polycrystalline nature of all films with crystallite size in the range of 9 to 15 nm. Sample anne...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute of Physics Publishing
2020
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/87557/1/NurhananiAflizanRusli2020_AnnealingTemperatureInducedImprovedCrystallinity.pdf http://eprints.utm.my/id/eprint/87557/ http://www.dx.doi.org/10.1088/2053-1591/ab9039 |
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| Institution: | Universiti Teknologi Malaysia |
| Language: | English |
| Summary: | Six YSZ thin films (YSZTFs) were prepared at varied annealing temperature (380 °C to 600 °C) by radio frequency magnetron sputtering method. Glancing angle x-ray diffraction (GAXRD) pattern revealed the polycrystalline nature of all films with crystallite size in the range of 9 to 15 nm. Sample annealed at 400 °C displayed the lowest microstrain (0.262) and crystallinity (60%). FESEM images disclosed dense, homogeneous and crack free growth of annealed samples compared to as-deposited one. EDX spectra detected the right elemental compositions of films. AFM images showed growth evolution of YSZ grains with size range between 0.2 to 5 nm and improved films' surface roughness. HRTEM measurement of the studied YSZTFs exhibited lattice orientation and atomic structure of nucleated YSZ nanocrystallites. Furthermore, film annealed at 500 °C divulged less oriented structure because of dislocation. |
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