Reflectance characteristics of silicon surface fabricated with the arrays of uniform inverted pyramid microstructures in UV-visible range

In this paper, inverted pyramidal microstructures are designed and fabricated on silicon (Si) surface. The characteristics of surface reflectance are simulated using two-dimensional (2D) finite-difference time-domain (FDTD) method by varying the spacing (S) and width (W) of the pyramidal microstruct...

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Main Authors: Abdullah, Mohd. Faizol, Hashim, Abdul Manaf
Format: Article
Language:English
Published: Penerbit UKM 2019
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Online Access:http://eprints.utm.my/id/eprint/89260/1/MohdFaizolAbdullah2019_ReflectanceCharacteristicsofSiliconSurfaceFabricated.pdf
http://eprints.utm.my/id/eprint/89260/
http://dx.doi.org/10.17576/jsm-2019-4806-02
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Institution: Universiti Teknologi Malaysia
Language: English
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spelling my.utm.892602021-02-22T06:01:20Z http://eprints.utm.my/id/eprint/89260/ Reflectance characteristics of silicon surface fabricated with the arrays of uniform inverted pyramid microstructures in UV-visible range Abdullah, Mohd. Faizol Hashim, Abdul Manaf TA Engineering (General). Civil engineering (General) In this paper, inverted pyramidal microstructures are designed and fabricated on silicon (Si) surface. The characteristics of surface reflectance are simulated using two-dimensional (2D) finite-difference time-domain (FDTD) method by varying the spacing (S) and width (W) of the pyramidal microstructures. The results showed that the effect of S is more significant compared to W where the reflectance of the irradiated light has been increased gradually with the increase of S from 0 to 3 µm, and the difference is around 9.6%. Due to the etching constraint, S= 3 µm is chosen for the fabrication. Textured structure is fabricated by the anisotropic etching of tetramethyl-ammonium hydroxide (TMAH) with additional of isopropyl alcohol (IPA). Long etching time of 120 min is required to form uniform arrays of pyramidal microstructures with smooth and well-terminated four sidewalls at (111) plane. Due to the undercut etching under SiO2 mask, it results to the formation of slightly larger W and smaller S in the fabricated structures. The measured average reflectance in UV-visible range for the Si with inverted pyramidal microstructures is very low down to 10.4%. The discrepancy between the measured and simulated values is speculated to be due to the use of 2D FDTD instead of three-dimensional (3D) FDTD. Penerbit UKM 2019-06 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/89260/1/MohdFaizolAbdullah2019_ReflectanceCharacteristicsofSiliconSurfaceFabricated.pdf Abdullah, Mohd. Faizol and Hashim, Abdul Manaf (2019) Reflectance characteristics of silicon surface fabricated with the arrays of uniform inverted pyramid microstructures in UV-visible range. Sains Malaysiana, 48 (6). pp. 1163-1169. ISSN 0126-6039 http://dx.doi.org/10.17576/jsm-2019-4806-02 DOI:10.17576/jsm-2019-4806-02
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic TA Engineering (General). Civil engineering (General)
spellingShingle TA Engineering (General). Civil engineering (General)
Abdullah, Mohd. Faizol
Hashim, Abdul Manaf
Reflectance characteristics of silicon surface fabricated with the arrays of uniform inverted pyramid microstructures in UV-visible range
description In this paper, inverted pyramidal microstructures are designed and fabricated on silicon (Si) surface. The characteristics of surface reflectance are simulated using two-dimensional (2D) finite-difference time-domain (FDTD) method by varying the spacing (S) and width (W) of the pyramidal microstructures. The results showed that the effect of S is more significant compared to W where the reflectance of the irradiated light has been increased gradually with the increase of S from 0 to 3 µm, and the difference is around 9.6%. Due to the etching constraint, S= 3 µm is chosen for the fabrication. Textured structure is fabricated by the anisotropic etching of tetramethyl-ammonium hydroxide (TMAH) with additional of isopropyl alcohol (IPA). Long etching time of 120 min is required to form uniform arrays of pyramidal microstructures with smooth and well-terminated four sidewalls at (111) plane. Due to the undercut etching under SiO2 mask, it results to the formation of slightly larger W and smaller S in the fabricated structures. The measured average reflectance in UV-visible range for the Si with inverted pyramidal microstructures is very low down to 10.4%. The discrepancy between the measured and simulated values is speculated to be due to the use of 2D FDTD instead of three-dimensional (3D) FDTD.
format Article
author Abdullah, Mohd. Faizol
Hashim, Abdul Manaf
author_facet Abdullah, Mohd. Faizol
Hashim, Abdul Manaf
author_sort Abdullah, Mohd. Faizol
title Reflectance characteristics of silicon surface fabricated with the arrays of uniform inverted pyramid microstructures in UV-visible range
title_short Reflectance characteristics of silicon surface fabricated with the arrays of uniform inverted pyramid microstructures in UV-visible range
title_full Reflectance characteristics of silicon surface fabricated with the arrays of uniform inverted pyramid microstructures in UV-visible range
title_fullStr Reflectance characteristics of silicon surface fabricated with the arrays of uniform inverted pyramid microstructures in UV-visible range
title_full_unstemmed Reflectance characteristics of silicon surface fabricated with the arrays of uniform inverted pyramid microstructures in UV-visible range
title_sort reflectance characteristics of silicon surface fabricated with the arrays of uniform inverted pyramid microstructures in uv-visible range
publisher Penerbit UKM
publishDate 2019
url http://eprints.utm.my/id/eprint/89260/1/MohdFaizolAbdullah2019_ReflectanceCharacteristicsofSiliconSurfaceFabricated.pdf
http://eprints.utm.my/id/eprint/89260/
http://dx.doi.org/10.17576/jsm-2019-4806-02
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