Electroless nickel underlayer deposited between copper filler and silicon substrate: effect of bath pH
This research proposed intermediate materials between Cu filler and Si wafer to reduce the coefficient of thermal expansion (CTE) mismatch in the through silicon via (TSV) structure. The proposed material is Ni underlayer because it has CTE value between Cu and SiO2 which is 13 ppm/°C (Cu = 17 ppm/°...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
Taylor and Francis Ltd.
2021
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/93312/ http://dx.doi.org/10.1080/2374068X.2020.1754741 |
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| Institution: | Universiti Teknologi Malaysia |