Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons

We have demonstrated that Si single-electron or single-hole SOI-MOSFETs with the multi-dots channel have attractive new functions such as photon detection and single-electron transfer. Multi-dots formed by selective-oxidation-induced patterning of the thin SOI layer have been used in the experiments...

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Main Authors: Tabe, Michiharu, Burhanudin, Zainal Arif, Nuryadi, Ratno, Moraru, Daniel, Ligowski, Maciej, Jablonski, Ryszard, Takeshi, Mizuno
Format: Article
Published: 2009
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Online Access:http://eprints.utp.edu.my/4492/1/MRS_Proceedings.pdf
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=7973924&fulltextType=RA&fileId=S1946427400025379
http://eprints.utp.edu.my/4492/
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Institution: Universiti Teknologi Petronas
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spelling my.utp.eprints.44922017-01-19T08:25:30Z Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons Tabe, Michiharu Burhanudin, Zainal Arif Nuryadi, Ratno Moraru, Daniel Ligowski, Maciej Jablonski, Ryszard Takeshi, Mizuno TK Electrical engineering. Electronics Nuclear engineering We have demonstrated that Si single-electron or single-hole SOI-MOSFETs with the multi-dots channel have attractive new functions such as photon detection and single-electron transfer. Multi-dots formed by selective-oxidation-induced patterning of the thin SOI layer have been used in the experiments of photon detection, while, most recently, we have utilized smaller dots consisting of individual dopant potentials in single electron transfer devices. Furthermore, in order to directly observe spatial landscape of single charges in the channel region, we have developed Low Temperature-Kelvin Probe Force Microscopy and succeeded in detecting single-dopant potential in the channel region. In this paper, photon detection by these devices will be primarily described. 2009-01-01 Article PeerReviewed application/pdf http://eprints.utp.edu.my/4492/1/MRS_Proceedings.pdf http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=7973924&fulltextType=RA&fileId=S1946427400025379 Tabe, Michiharu and Burhanudin, Zainal Arif and Nuryadi, Ratno and Moraru, Daniel and Ligowski, Maciej and Jablonski, Ryszard and Takeshi, Mizuno (2009) Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons. 2008 MRS Fall Meeting . pp. 1-7. http://eprints.utp.edu.my/4492/
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Institutional Repository
url_provider http://eprints.utp.edu.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Tabe, Michiharu
Burhanudin, Zainal Arif
Nuryadi, Ratno
Moraru, Daniel
Ligowski, Maciej
Jablonski, Ryszard
Takeshi, Mizuno
Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons
description We have demonstrated that Si single-electron or single-hole SOI-MOSFETs with the multi-dots channel have attractive new functions such as photon detection and single-electron transfer. Multi-dots formed by selective-oxidation-induced patterning of the thin SOI layer have been used in the experiments of photon detection, while, most recently, we have utilized smaller dots consisting of individual dopant potentials in single electron transfer devices. Furthermore, in order to directly observe spatial landscape of single charges in the channel region, we have developed Low Temperature-Kelvin Probe Force Microscopy and succeeded in detecting single-dopant potential in the channel region. In this paper, photon detection by these devices will be primarily described.
format Article
author Tabe, Michiharu
Burhanudin, Zainal Arif
Nuryadi, Ratno
Moraru, Daniel
Ligowski, Maciej
Jablonski, Ryszard
Takeshi, Mizuno
author_facet Tabe, Michiharu
Burhanudin, Zainal Arif
Nuryadi, Ratno
Moraru, Daniel
Ligowski, Maciej
Jablonski, Ryszard
Takeshi, Mizuno
author_sort Tabe, Michiharu
title Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons
title_short Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons
title_full Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons
title_fullStr Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons
title_full_unstemmed Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons
title_sort si single-electron soi-mosfets: interplay with individual dopants and photons
publishDate 2009
url http://eprints.utp.edu.my/4492/1/MRS_Proceedings.pdf
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=7973924&fulltextType=RA&fileId=S1946427400025379
http://eprints.utp.edu.my/4492/
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