Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons
We have demonstrated that Si single-electron or single-hole SOI-MOSFETs with the multi-dots channel have attractive new functions such as photon detection and single-electron transfer. Multi-dots formed by selective-oxidation-induced patterning of the thin SOI layer have been used in the experiments...
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my.utp.eprints.44922017-01-19T08:25:30Z Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons Tabe, Michiharu Burhanudin, Zainal Arif Nuryadi, Ratno Moraru, Daniel Ligowski, Maciej Jablonski, Ryszard Takeshi, Mizuno TK Electrical engineering. Electronics Nuclear engineering We have demonstrated that Si single-electron or single-hole SOI-MOSFETs with the multi-dots channel have attractive new functions such as photon detection and single-electron transfer. Multi-dots formed by selective-oxidation-induced patterning of the thin SOI layer have been used in the experiments of photon detection, while, most recently, we have utilized smaller dots consisting of individual dopant potentials in single electron transfer devices. Furthermore, in order to directly observe spatial landscape of single charges in the channel region, we have developed Low Temperature-Kelvin Probe Force Microscopy and succeeded in detecting single-dopant potential in the channel region. In this paper, photon detection by these devices will be primarily described. 2009-01-01 Article PeerReviewed application/pdf http://eprints.utp.edu.my/4492/1/MRS_Proceedings.pdf http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=7973924&fulltextType=RA&fileId=S1946427400025379 Tabe, Michiharu and Burhanudin, Zainal Arif and Nuryadi, Ratno and Moraru, Daniel and Ligowski, Maciej and Jablonski, Ryszard and Takeshi, Mizuno (2009) Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons. 2008 MRS Fall Meeting . pp. 1-7. http://eprints.utp.edu.my/4492/ |
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TK Electrical engineering. Electronics Nuclear engineering Tabe, Michiharu Burhanudin, Zainal Arif Nuryadi, Ratno Moraru, Daniel Ligowski, Maciej Jablonski, Ryszard Takeshi, Mizuno Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons |
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We have demonstrated that Si single-electron or single-hole SOI-MOSFETs with the multi-dots channel have attractive new functions such as photon detection and single-electron transfer. Multi-dots formed by selective-oxidation-induced patterning of the thin SOI layer have been used in the experiments of photon detection, while, most recently, we have utilized smaller dots consisting of individual dopant potentials in single electron transfer devices. Furthermore, in order to directly observe spatial landscape of single charges in the channel region, we have developed Low Temperature-Kelvin Probe Force Microscopy and succeeded in detecting single-dopant potential in the channel region. In this paper, photon detection by these devices will be primarily described. |
format |
Article |
author |
Tabe, Michiharu Burhanudin, Zainal Arif Nuryadi, Ratno Moraru, Daniel Ligowski, Maciej Jablonski, Ryszard Takeshi, Mizuno |
author_facet |
Tabe, Michiharu Burhanudin, Zainal Arif Nuryadi, Ratno Moraru, Daniel Ligowski, Maciej Jablonski, Ryszard Takeshi, Mizuno |
author_sort |
Tabe, Michiharu |
title |
Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons |
title_short |
Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons |
title_full |
Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons |
title_fullStr |
Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons |
title_full_unstemmed |
Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons |
title_sort |
si single-electron soi-mosfets: interplay with individual dopants and photons |
publishDate |
2009 |
url |
http://eprints.utp.edu.my/4492/1/MRS_Proceedings.pdf http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=7973924&fulltextType=RA&fileId=S1946427400025379 http://eprints.utp.edu.my/4492/ |
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