Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons

• Main Authors: Tabe, Michiharu, Burhanudin, Zainal Arif, Nuryadi, Ratno, Moraru, Daniel, Ligowski, Maciej, Jablonski, Ryszard, Takeshi, Mizuno
• Format: Article
• Published: 2009
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utp.edu.my/4492/1/MRS_Proceedings.pdf; http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=7973924&fulltextType=RA&fileId=S1946427400025379; http://eprints.utp.edu.my/4492/
• Institution: Universiti Teknologi Petronas

We have demonstrated that Si single-electron or single-hole SOI-MOSFETs with the multi-dots channel have attractive new functions such as photon detection and single-electron transfer. Multi-dots formed by selective-oxidation-induced patterning of the thin SOI layer have been used in the experiments...