Detection of field-induced single-acceptor ionization in Si by single-hole-tunneling transistor
The authors have detected the ionization of single-acceptors in the underlying p on p+ substrate of a silicon-on-insulator (SOI) wafer using a single-hole-tunneling (SHT) transistor fabricated in the top Si layer of the SOI at low temperatures. It was found that freeze-out boron atoms in the substra...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
American Institute of Physics
2007
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| Subjects: | |
| Online Access: | http://apl.aip.org/resource/1/applab/v91/i4/p042103_s1?isAuthorized=no http://eprints.utp.edu.my/5376/ |
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| Institution: | Universiti Teknologi Petronas |