Detection of field-induced single-acceptor ionization in Si by single-hole-tunneling transistor

• Main Authors: Burhanudin, Zainal Arif, Nuryadi, Ratno, Tabe, Michiharu
• Format: Article
• Published: American Institute of Physics 2007
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://apl.aip.org/resource/1/applab/v91/i4/p042103_s1?isAuthorized=no; http://eprints.utp.edu.my/5376/
• Institution: Universiti Teknologi Petronas

The authors have detected the ionization of single-acceptors in the underlying p on p+ substrate of a silicon-on-insulator (SOI) wafer using a single-hole-tunneling (SHT) transistor fabricated in the top Si layer of the SOI at low temperatures. It was found that freeze-out boron atoms in the substra...