The Mobilities of Carriers Confined in a Single-side Doped Square Quantum Wells Dependence on Temperature

The Mobilities of Carriers Confined in a Single-side Doped Square Quantum Wells Dependence on Temperature

A theory is given of the mobility of a two-dimensional electron gas at high temperature in single-side square quantum wells. Within the variational approach, we obtain analytic expressions for the carrier distribution, and autocorrelation functions for various scattering mechanisms. We examine the d...

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Main Author: Tran, Thi Hai
Format: Article
Language:English
Published: H. : ĐHQGHN 2017
Subjects:
Single-side (1S) doing
variational approach
mobility
square quantum wells
Online Access:http://repository.vnu.edu.vn/handle/VNU_123/55379
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Institution: Vietnam National University, Hanoi
Language: English
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spelling oai:112.137.131.14:VNU_123-553792018-07-23T07:59:19Z The Mobilities of Carriers Confined in a Single-side Doped Square Quantum Wells Dependence on Temperature Tran, Thi Hai Single-side (1S) doing variational approach mobility square quantum wells A theory is given of the mobility of a two-dimensional electron gas at high temperature in single-side square quantum wells. Within the variational approach, we obtain analytic expressions for the carrier distribution, and autocorrelation functions for various scattering mechanisms. We examine the dependence of the mobilities of carriers on the temperature. Our theory is able to well reproduce the recent experimental data on transport in 1S-doped square QWs, e.g., acoustic-phonon partial mobility dependence on temperature for single-side modulation doped square quantum wells. 2017-08-04T02:41:18Z 2017-08-04T02:41:18Z 2017 Article Tran, T. H. (2017). The Mobilities of Carriers Confined in a Single-side Doped Square Quantum Wells Dependence on Temperature. VNU Journal of Science, Mathematics- Physics, 33, 2, 59-65. 2588-1124 http://repository.vnu.edu.vn/handle/VNU_123/55379 en Journal of Mathematics- Physics application/pdf H. : ĐHQGHN
institution Vietnam National University, Hanoi
building VNU Library & Information Center
country Vietnam
collection VNU Digital Repository
language English
topic Single-side (1S) doing
variational approach
mobility
square quantum wells
spellingShingle Single-side (1S) doing
variational approach
mobility
square quantum wells
Tran, Thi Hai
The Mobilities of Carriers Confined in a Single-side Doped Square Quantum Wells Dependence on Temperature
description A theory is given of the mobility of a two-dimensional electron gas at high temperature in single-side square quantum wells. Within the variational approach, we obtain analytic expressions for the carrier distribution, and autocorrelation functions for various scattering mechanisms. We examine the dependence of the mobilities of carriers on the temperature. Our theory is able to well reproduce the recent experimental data on transport in 1S-doped square QWs, e.g., acoustic-phonon partial mobility dependence on temperature for single-side modulation doped square quantum wells.
format Article
author Tran, Thi Hai
author_facet Tran, Thi Hai
author_sort Tran, Thi Hai
title The Mobilities of Carriers Confined in a Single-side Doped Square Quantum Wells Dependence on Temperature
title_short The Mobilities of Carriers Confined in a Single-side Doped Square Quantum Wells Dependence on Temperature
title_full The Mobilities of Carriers Confined in a Single-side Doped Square Quantum Wells Dependence on Temperature
title_fullStr The Mobilities of Carriers Confined in a Single-side Doped Square Quantum Wells Dependence on Temperature
title_full_unstemmed The Mobilities of Carriers Confined in a Single-side Doped Square Quantum Wells Dependence on Temperature
title_sort mobilities of carriers confined in a single-side doped square quantum wells dependence on temperature
publisher H. : ĐHQGHN
publishDate 2017
url http://repository.vnu.edu.vn/handle/VNU_123/55379
_version_ 1680965276077654016

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