The Mobilities of Carriers Confined in a Single-side Doped Square Quantum Wells Dependence on Temperature

A theory is given of the mobility of a two-dimensional electron gas at high temperature in single-side square quantum wells. Within the variational approach, we obtain analytic expressions for the carrier distribution, and autocorrelation functions for various scattering mechanisms. We examine the d...

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主要作者: Tran, Thi Hai
格式: Article
語言:English
出版: H. : ĐHQGHN 2017
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在線閱讀:http://repository.vnu.edu.vn/handle/VNU_123/55379
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