The Mobilities of Carriers Confined in a Single-side Doped Square Quantum Wells Dependence on Temperature
A theory is given of the mobility of a two-dimensional electron gas at high temperature in single-side square quantum wells. Within the variational approach, we obtain analytic expressions for the carrier distribution, and autocorrelation functions for various scattering mechanisms. We examine the d...
محفوظ في:
المؤلف الرئيسي: | Tran, Thi Hai |
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التنسيق: | مقال |
اللغة: | English |
منشور في: |
H. : ĐHQGHN
2017
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الموضوعات: | |
الوصول للمادة أونلاين: | http://repository.vnu.edu.vn/handle/VNU_123/55379 |
الوسوم: |
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