Segregation of Manganese Atoms during the Growth of Ge1-xMnx Nanocolumns on Ge (001)
High resolution - transmission electron microscopy (HR-TEM), along with Reflection High-Energy Electron Diffraction (RHEED) and Laser pulse atom probe tomography (LP- APT) were used to investigate the growth kinetics of Ge1-xMnx nanocolumn on Ge(001) and the mechanism of Ge1-xMnx nanocolumn formatio...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
H. : ĐHQGHN
2017
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| Subjects: | |
| Online Access: | http://repository.vnu.edu.vn/handle/VNU_123/56059 |
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| Institution: | Vietnam National University, Hanoi |
| Language: | English |
| Summary: | High resolution - transmission electron microscopy (HR-TEM), along with Reflection High-Energy Electron Diffraction (RHEED) and Laser pulse atom probe tomography (LP- APT) were used to investigate the growth kinetics of Ge1-xMnx nanocolumn on Ge(001) and the mechanism of Ge1-xMnx nanocolumn formation. The results evidence that during the deposition of Ge1-xMnx film, Mn atoms diffuse into the Ge matrix to form Mn-rich regions and the upward segregation of Mn atoms along the [001] direction is the origin of the Mn concentration enrichment inside the nanocolumns. |
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