Segregation of Manganese Atoms during the Growth of Ge1-xMnx Nanocolumns on Ge (001)

Segregation of Manganese Atoms during the Growth of Ge1-xMnx Nanocolumns on Ge (001)

High resolution - transmission electron microscopy (HR-TEM), along with Reflection High-Energy Electron Diffraction (RHEED) and Laser pulse atom probe tomography (LP- APT) were used to investigate the growth kinetics of Ge1-xMnx nanocolumn on Ge(001) and the mechanism of Ge1-xMnx nanocolumn formatio...

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Main Authors: Le, Thi Giang, Nguyen, Manh An
Format: Article
Language:English
Published: H. : ĐHQGHN 2017
Subjects:
Diluted magnetic semiconductors
nanocolumns
Ge3Mn5 clusters
Mn segregation
Online Access:http://repository.vnu.edu.vn/handle/VNU_123/56059
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Institution: Vietnam National University, Hanoi
Language: English
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spelling oai:112.137.131.14:VNU_123-560592018-08-21T04:34:53Z Segregation of Manganese Atoms during the Growth of Ge1-xMnx Nanocolumns on Ge (001) Le, Thi Giang Nguyen, Manh An Diluted magnetic semiconductors nanocolumns Ge3Mn5 clusters Mn segregation High resolution - transmission electron microscopy (HR-TEM), along with Reflection High-Energy Electron Diffraction (RHEED) and Laser pulse atom probe tomography (LP- APT) were used to investigate the growth kinetics of Ge1-xMnx nanocolumn on Ge(001) and the mechanism of Ge1-xMnx nanocolumn formation. The results evidence that during the deposition of Ge1-xMnx film, Mn atoms diffuse into the Ge matrix to form Mn-rich regions and the upward segregation of Mn atoms along the [001] direction is the origin of the Mn concentration enrichment inside the nanocolumns. 2017-08-09T07:35:42Z 2017-08-09T07:35:42Z 2014 Article Le, T. G. & Nguyen, M. A. (2014). Segregation of Manganese Atoms during the Growth of Ge1-xMnx Nanocolumns on Ge (001). VNU Journal of Science: Mathematics – Physics, 30(2), 10-17. 2588-1124 http://repository.vnu.edu.vn/handle/VNU_123/56059 en VNU Journal of Science: Mathematics – Physics application/pdf H. : ĐHQGHN
institution Vietnam National University, Hanoi
building VNU Library & Information Center
country Vietnam
collection VNU Digital Repository
language English
topic Diluted magnetic semiconductors
nanocolumns
Ge3Mn5 clusters
Mn segregation
spellingShingle Diluted magnetic semiconductors
nanocolumns
Ge3Mn5 clusters
Mn segregation
Le, Thi Giang
Nguyen, Manh An
Segregation of Manganese Atoms during the Growth of Ge1-xMnx Nanocolumns on Ge (001)
description High resolution - transmission electron microscopy (HR-TEM), along with Reflection High-Energy Electron Diffraction (RHEED) and Laser pulse atom probe tomography (LP- APT) were used to investigate the growth kinetics of Ge1-xMnx nanocolumn on Ge(001) and the mechanism of Ge1-xMnx nanocolumn formation. The results evidence that during the deposition of Ge1-xMnx film, Mn atoms diffuse into the Ge matrix to form Mn-rich regions and the upward segregation of Mn atoms along the [001] direction is the origin of the Mn concentration enrichment inside the nanocolumns.
format Article
author Le, Thi Giang
Nguyen, Manh An
author_facet Le, Thi Giang
Nguyen, Manh An
author_sort Le, Thi Giang
title Segregation of Manganese Atoms during the Growth of Ge1-xMnx Nanocolumns on Ge (001)
title_short Segregation of Manganese Atoms during the Growth of Ge1-xMnx Nanocolumns on Ge (001)
title_full Segregation of Manganese Atoms during the Growth of Ge1-xMnx Nanocolumns on Ge (001)
title_fullStr Segregation of Manganese Atoms during the Growth of Ge1-xMnx Nanocolumns on Ge (001)
title_full_unstemmed Segregation of Manganese Atoms during the Growth of Ge1-xMnx Nanocolumns on Ge (001)
title_sort segregation of manganese atoms during the growth of ge1-xmnx nanocolumns on ge (001)
publisher H. : ĐHQGHN
publishDate 2017
url http://repository.vnu.edu.vn/handle/VNU_123/56059
_version_ 1680963619129393152

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