Fabrication of polypyrrole (p-toluenesulphonate doped) metal Schottky contacts

• Main Authors: Atienza, Mayzelle A., Roque, Dee Jay R., Sarmiento, Senen B.
• Format: text
• Language: English
• Published: Animo Repository 1995
• Subjects: Pyrrole; Polymers and polymerization; Metal semiconductor field-effect transistors; Diodes, Schottky-barrier; x4 Schottky-barrier diodes
• Online Access: https://animorepository.dlsu.edu.ph/etd_bachelors/9836
• Institution: De La Salle University

Studies in conducting polymers has been a growing interest in the field of microelectronics. One such microelectronic device being fabricated is a PPy(p-TS)-based diode called Schottky diode, which consist of semi-conductor [PPy(p-TS)]/metal foil [A], Sn, Pb, and In] junction. In this paper, fabrication of Schottky contact -- via pressure contact and direct deposition -- and its properties were analyzed. PPy(p-TS) is found to form a rectifying junction with In even with minimal pressure of 500 Pa. Junctions with A1, Sn and Pb generally exhibit assymetric I-V curves, suggesting non-ohmic, but not fully rectifying behavior. The PPy(p-TS) samples of lower conductivity was also observed as producing poor rectifying contacts. Junction fabrication with direct deposition of PPy(p-TS) on AL and Pb are not possible with the solvent and dopant used. Although PPy(p-TS) is deposited onto Sn, 1-V characterization of PPy(p-TS)/Sn is impossible for film deposits on Sn are very thin and very brittle. This only suggest that the development of electrodeposited PPy(p-TS)-based devices is inherently difficult.