Electrical transport properties of PbSn1-xTe thin films and Pb1-xSnxTe bulk samples
PbxSn1-xTe thin films deposited by vapor technique and Pb1-xSnxTe bulk samples grown by horizontal unseeded vapor phased growth (HUGV) were characterized through its electronic transport properties. These include resistivity and Hall measurements varied from a temperature of 77K-373K and from 77K-30...
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| 格式: | text |
| 語言: | English |
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Animo Repository
1996
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| 在線閱讀: | https://animorepository.dlsu.edu.ph/etd_bachelors/4158 |
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| 總結: | PbxSn1-xTe thin films deposited by vapor technique and Pb1-xSnxTe bulk samples grown by horizontal unseeded vapor phased growth (HUGV) were characterized through its electronic transport properties. These include resistivity and Hall measurements varied from a temperature of 77K-373K and from 77K-300K respectively using the Van der Pauw technique. Samples 1, 2, and 3 were made as bulk samples, while samples 2A, 3A, and 2B were fabricated thin films. Summary of results of p-T and Hall-T measurements were made to efficiently compare and analyze the results. The experiment showed that there was one semiconductor (sample 3). For Hall measurements, all of the samples exhibit increased in its Hall mobility as the temperature increased. Hall coefficient and Hall voltage behave the same way, but they affect the amount of carrier concentration of the samples. |
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