Electrical transport properties of PbSn1-xTe thin films and Pb1-xSnxTe bulk samples

PbxSn1-xTe thin films deposited by vapor technique and Pb1-xSnxTe bulk samples grown by horizontal unseeded vapor phased growth (HUGV) were characterized through its electronic transport properties. These include resistivity and Hall measurements varied from a temperature of 77K-373K and from 77K-30...

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Main Authors: Almanzor, Melissa Q., Ong, Ma. Carmellia G.
格式: text
語言:English
出版: Animo Repository 1996
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在線閱讀:https://animorepository.dlsu.edu.ph/etd_bachelors/4158
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