Electrical transport properties of PbSn1-xTe thin films and Pb1-xSnxTe bulk samples
PbxSn1-xTe thin films deposited by vapor technique and Pb1-xSnxTe bulk samples grown by horizontal unseeded vapor phased growth (HUGV) were characterized through its electronic transport properties. These include resistivity and Hall measurements varied from a temperature of 77K-373K and from 77K-30...
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Animo Repository
1996
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