Fabrication of Pbx+Sn1-xTe thin films using vapor deposition

PbxSn1-xTe thin films were fabricated using vertical vapor deposition technique. The pre-reacted PbxSn1-xTe crystals with varying concentrations at x = 0.2, 0.5, and 0.8 were placed on a quartz tube, heated at 850 centigrade and was deposited on a glass substrate at a temperature of = 318 centigrade...

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Main Authors: Lim, Jose Renato G., Mancilla, Delfin A.
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Language:English
Published: Animo Repository 1996
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Online Access:https://animorepository.dlsu.edu.ph/etd_bachelors/4156
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Institution: De La Salle University
Language: English
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spelling oai:animorepository.dlsu.edu.ph:etd_bachelors-47322021-01-19T07:50:34Z Fabrication of Pbx+Sn1-xTe thin films using vapor deposition Lim, Jose Renato G. Mancilla, Delfin A. PbxSn1-xTe thin films were fabricated using vertical vapor deposition technique. The pre-reacted PbxSn1-xTe crystals with varying concentrations at x = 0.2, 0.5, and 0.8 were placed on a quartz tube, heated at 850 centigrade and was deposited on a glass substrate at a temperature of = 318 centigrade. The quartz ampoule with an inner diameter of 0.9 cm and length of 25 cm closed on one end was attached to a fabricated high vacuum system with a vacuum pressure of 10 Torr oriented in the vertical direction. Improvised stainless clips hold the glass substrate which was oriented in the vertical direction while the source material was heated at 850 centigrade using a temperature controlled single zone furnace. XRD analysis of the thin films at x = 0.2 show that sharp diffraction peaks due to [1,1,1], [2,0,0], [2,2,0], [3,1,1], [2,2,2], [4,0,0], [4,2,0], [4,2,2] planes were characteristic of the face centered cubic (rocksalt) structure of PbSnTe and the lattice parameter of the crystal was found to be 6.64 nm. Part of the study was also focused on observing the surface quality of the thin film sample (both external and micrograph features), the diameter of the quartz glass tube used, its deposition time, the amount of mass of the pre-reacted crystal that will be deposited on the glass substrate, and the temperature of the glass substrate. From the results of the experiment, it was found out that the optimal deposition time was 30 minutes. Two samples at x = 0.2 were deposited using two different diameters of the quartz glass and the result were non-optical. The rest of the remaining concentration, such as x = 0.5 and x = 0.8 were optical and semi-optical respectively. Surface quality were observed from all of the varying concentrations. 1996-01-01T08:00:00Z text https://animorepository.dlsu.edu.ph/etd_bachelors/4156 Bachelor's Theses English Animo Repository Thin films Semiconductors Vapor-plating Physics
institution De La Salle University
building De La Salle University Library
continent Asia
country Philippines
Philippines
content_provider De La Salle University Library
collection DLSU Institutional Repository
language English
topic Thin films
Semiconductors
Vapor-plating
Physics
spellingShingle Thin films
Semiconductors
Vapor-plating
Physics
Lim, Jose Renato G.
Mancilla, Delfin A.
Fabrication of Pbx+Sn1-xTe thin films using vapor deposition
description PbxSn1-xTe thin films were fabricated using vertical vapor deposition technique. The pre-reacted PbxSn1-xTe crystals with varying concentrations at x = 0.2, 0.5, and 0.8 were placed on a quartz tube, heated at 850 centigrade and was deposited on a glass substrate at a temperature of = 318 centigrade. The quartz ampoule with an inner diameter of 0.9 cm and length of 25 cm closed on one end was attached to a fabricated high vacuum system with a vacuum pressure of 10 Torr oriented in the vertical direction. Improvised stainless clips hold the glass substrate which was oriented in the vertical direction while the source material was heated at 850 centigrade using a temperature controlled single zone furnace. XRD analysis of the thin films at x = 0.2 show that sharp diffraction peaks due to [1,1,1], [2,0,0], [2,2,0], [3,1,1], [2,2,2], [4,0,0], [4,2,0], [4,2,2] planes were characteristic of the face centered cubic (rocksalt) structure of PbSnTe and the lattice parameter of the crystal was found to be 6.64 nm. Part of the study was also focused on observing the surface quality of the thin film sample (both external and micrograph features), the diameter of the quartz glass tube used, its deposition time, the amount of mass of the pre-reacted crystal that will be deposited on the glass substrate, and the temperature of the glass substrate. From the results of the experiment, it was found out that the optimal deposition time was 30 minutes. Two samples at x = 0.2 were deposited using two different diameters of the quartz glass and the result were non-optical. The rest of the remaining concentration, such as x = 0.5 and x = 0.8 were optical and semi-optical respectively. Surface quality were observed from all of the varying concentrations.
format text
author Lim, Jose Renato G.
Mancilla, Delfin A.
author_facet Lim, Jose Renato G.
Mancilla, Delfin A.
author_sort Lim, Jose Renato G.
title Fabrication of Pbx+Sn1-xTe thin films using vapor deposition
title_short Fabrication of Pbx+Sn1-xTe thin films using vapor deposition
title_full Fabrication of Pbx+Sn1-xTe thin films using vapor deposition
title_fullStr Fabrication of Pbx+Sn1-xTe thin films using vapor deposition
title_full_unstemmed Fabrication of Pbx+Sn1-xTe thin films using vapor deposition
title_sort fabrication of pbx+sn1-xte thin films using vapor deposition
publisher Animo Repository
publishDate 1996
url https://animorepository.dlsu.edu.ph/etd_bachelors/4156
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