A theoretical approach on the doping process by diffusion of silicon and its resistivity measurements using the four-point probe method

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Main Authors: Decano, Hermogenes G., Jr., Fernandez, Francisco Elpidio C., Flores, Ramon Jose H., Nosenas, Jason N., San Juan, Jonathan C.
Format: text
Language:English
Published: Animo Repository 1991
Subjects:
Online Access:https://animorepository.dlsu.edu.ph/etd_bachelors/8786
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Institution: De La Salle University
Language: English
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spelling oai:animorepository.dlsu.edu.ph:etd_bachelors-94312021-08-12T10:56:18Z A theoretical approach on the doping process by diffusion of silicon and its resistivity measurements using the four-point probe method Decano, Hermogenes G., Jr. Fernandez, Francisco Elpidio C. Flores, Ramon Jose H. Nosenas, Jason N. San Juan, Jonathan C. 1991-01-01T08:00:00Z text https://animorepository.dlsu.edu.ph/etd_bachelors/8786 Bachelor's Theses English Animo Repository Semiconductor doping Siliconizing (Metallurgy) Engineering
institution De La Salle University
building De La Salle University Library
continent Asia
country Philippines
Philippines
content_provider De La Salle University Library
collection DLSU Institutional Repository
language English
topic Semiconductor doping
Siliconizing (Metallurgy)
Engineering
spellingShingle Semiconductor doping
Siliconizing (Metallurgy)
Engineering
Decano, Hermogenes G., Jr.
Fernandez, Francisco Elpidio C.
Flores, Ramon Jose H.
Nosenas, Jason N.
San Juan, Jonathan C.
A theoretical approach on the doping process by diffusion of silicon and its resistivity measurements using the four-point probe method
format text
author Decano, Hermogenes G., Jr.
Fernandez, Francisco Elpidio C.
Flores, Ramon Jose H.
Nosenas, Jason N.
San Juan, Jonathan C.
author_facet Decano, Hermogenes G., Jr.
Fernandez, Francisco Elpidio C.
Flores, Ramon Jose H.
Nosenas, Jason N.
San Juan, Jonathan C.
author_sort Decano, Hermogenes G., Jr.
title A theoretical approach on the doping process by diffusion of silicon and its resistivity measurements using the four-point probe method
title_short A theoretical approach on the doping process by diffusion of silicon and its resistivity measurements using the four-point probe method
title_full A theoretical approach on the doping process by diffusion of silicon and its resistivity measurements using the four-point probe method
title_fullStr A theoretical approach on the doping process by diffusion of silicon and its resistivity measurements using the four-point probe method
title_full_unstemmed A theoretical approach on the doping process by diffusion of silicon and its resistivity measurements using the four-point probe method
title_sort theoretical approach on the doping process by diffusion of silicon and its resistivity measurements using the four-point probe method
publisher Animo Repository
publishDate 1991
url https://animorepository.dlsu.edu.ph/etd_bachelors/8786
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