A theoretical approach on the doping process by diffusion of silicon and its resistivity measurements using the four-point probe method

A theoretical approach on the doping process by diffusion of silicon and its resistivity measurements using the four-point probe method

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Bibliographic Details
Main Authors: Decano, Hermogenes G., Jr., Fernandez, Francisco Elpidio C., Flores, Ramon Jose H., Nosenas, Jason N., San Juan, Jonathan C.
Format: text
Language:English
Published: Animo Repository 1991
Subjects:
Semiconductor doping
Siliconizing (Metallurgy)
Engineering
Online Access:https://animorepository.dlsu.edu.ph/etd_bachelors/8786
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Institution: De La Salle University
Language: English

Internet

https://animorepository.dlsu.edu.ph/etd_bachelors/8786

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